Chemical vapor deposition of trigonal prismatic NbS2 monolayers and 3R-polytype few-layers

Chemical vapor deposition of trigonal prismatic NbS2 monolayers and 3R-polytype few-layers
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三方柱状 NbS2 单层和 3R 多型少层的化学气相沉积

DOI:
10.1039/c7nr05572b
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发表时间:
2017
期刊:
影响因子:
6.7
通讯作者:
Xie Liming
Xie Liming
中科院分区:
材料科学2区
文献类型:
--
作者:
Wang Xinsheng;Lin Junhao;Zhu Yiming;Luo Chen;Suenaga Kazutomo;Cai Congzhong;Xie Liming

文献摘要

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VB族过渡金属二卤化物(TMD)具有有趣的结构依赖电荷密度波和超导电性。本文报道了在六方氮化硼(h-BN)上直接化学气相沉积大尺寸NbS_2单分子膜和具有三角配位和3R多型层-层堆积的少数层。用显微拉曼光谱和原子分辨扫描电子显微镜(STEM)对其结构进行了确认。
Group VB transition-metal dichalcogenides (TMDs) have an intriguing structure-dependent charge density wave and superconductivity. Here, we report the direct chemical vapor deposition of large-size NbS2 monolayers and few-layers with trigonal prismatic coordination and 3R polytype layer–layer stacking on hexagonal boron nitride (h-BN). The structure has been confirmed by micro-Raman spectroscopy and atomic-resolution scanning transmission electron microscopy (STEM).