Transferred via contacts as a platform for ideal two-dimensional transistors
Transferred via contacts as a platform for ideal two-dimensional transistors
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DOI：
10.1038/s41928-019-0245-y
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发表时间：
2019-05-01
影响因子：
34.3
通讯作者：
Teherani, James T.
中科院分区：
文献类型：
--
作者：
Jung, Younghun;Choi, Min Sup;Teherani, James T.
二维半导体具有许多有价值的特性，可用于制造新型电子器件。然而，创建具有良好接触和稳定性能的2D器件已被证明具有挑战性。在这里，我们展示了由嵌入绝缘六方氮化硼中的金属制成并干法转移到2D半导体上的转移通孔接触，可用于制造高质量的2D晶体管。该方法防止了直接金属化引起的损伤，并允许全手套箱处理，为2D器件制造提供了清洁，稳定和无损伤的平台。使用这种方法，我们创建场效应晶体管（FET）从双层p型二硒化钨（WSe 2），表现出高空穴迁移率和低接触电阻。制造的器件还表现出高电流和稳定性超过两个月的测量。此外，低接触电阻和干净的沟道使我们能够创建一个接近理想的顶栅p-FET，在290 K时亚阈值摆幅为64 mV/decade。
Two-dimensional semiconductors have a number of valuable properties that could be used to create novel electronic devices. However, creating 2D devices with good contacts and stable performance has proved challenging. Here we show that transferred via contacts, made from metal embedded in insulating hexagonal boron nitride and dry transferred onto 2D semiconductors, can be used to create high-quality 2D transistors. The approach prevents damage induced by direct metallization and allows full glovebox processing, providing a clean, stable and damage-free platform for 2D device fabrication. Using the approach, we create field-effect transistors (FETs) from bilayer p-type tungsten diselenide (WSe2) that exhibit high hole mobility and low contact resistance. The fabricated devices also exhibit high current and stability for over two months of measurements. Furthermore, the low contact resistance and clean channel allow us to create a nearly ideal top-gated p-FET with a subthreshold swing of 64 mV per decade at 290 K.