Effect of strain on the local phase transition temperature of MnAs/GaAs(001)
Effect of strain on the local phase transition temperature of MnAs/GaAs(001)
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应变对MnAs/GaAs(001)局部相变温度的影响
DOI：
10.1063/1.1615836
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发表时间：
2003
影响因子：
4
通讯作者：
K. Ploog
中科院分区：
文献类型：
--
作者：
J. Mohanty;T. Hesjedal;A. Ney;Y. Takagaki;R. Koch;L. Däweritz;K. Ploog
我们给出了局部应变对GaAs外延MnAs薄膜相变行为影响的测量结果（001）。如前所述，铁磁性α-MnAs和顺磁性β-MnAs的条纹在室温下共存。温度相关的原子力和磁力显微镜显示，生长膜转变为顺磁β相的特征温度T*在局部向上移动，接近未应变的体MnAs的值。显示较高T*的薄膜区域被确定为允许MnAs薄膜中的应变放松的区域。
We present measurements of the influence of local strain on the phase transition behavior of epitaxial MnAs films on GaAs(001). As shown previously, stripes of ferromagnetic α-MnAs and paramagnetic β-MnAs coexist around room temperature. Temperature-dependent atomic force and magnetic force microscopy reveals that the characteristic temperature T*, at which the as-grown films transform to the paramagnetic β-phase, is locally shifted up towards the value of unstrained bulk MnAs. The film areas exhibiting a higher T* were identified as regions in which the strain in the MnAs film was allowed to relax.