Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process
Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process
复制标题
DOI：
10.1038/nmat2914
复制
发表时间：
2011-01-01
期刊：
影响因子：
41.2
通讯作者：
Sirringhaus, H.
中科院分区：
文献类型：
--
作者：
Banger, K. K.;Yamashita, Y.;Sirringhaus, H.
目前，对于要求苛刻的显示器应用（如有机发光二极管显示器），还没有“理想的”薄膜晶体管技术，该技术允许将有机半导体提供的低温、溶液加工性与微晶硅可实现的高水平性能相结合（1）。N型非晶混合金属氧化物半导体，如三元氧化物Mx（1）My（2）O（z），其中M-1和M-2是金属，如In、Ga、Sn或Zn，由于其高载流子迁移率和稳定性（2，3）以及良好的光学透明度，最近获得了发展势头，但它们主要通过溅射沉积。到目前为止，还没有一种在低工艺温度下从溶液中形成高性能混合氧化物材料的途径
At present there is no 'ideal' thin-film transistor technology for demanding display applications, such as organic light-emitting diode displays, that allows combining the low-temperature, solution-processability offered by organic semiconductors with the high level of performance achievable with microcrystalline silicon(1). N-type amorphous mixed metal oxide semiconductors, such as ternary oxides Mx(1)My(2)O(z), where M-1 and M-2 are metals such as In, Ga, Sn, or Zn, have recently gained momentum because of their high carrier mobility and stability(2,3) and good optical transparency, but they are mostly deposited by sputtering. So far no route is available for forming high-performance mixed oxide materials from solution at low process temperatures