Current-induced crystallisation in a Heusler-alloy-based giant magnetoresistive junction for neuromorphic potentiation
Current-induced crystallisation in a Heusler-alloy-based giant magnetoresistive junction for neuromorphic potentiation
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DOI：
10.1016/j.jmmm.2023.170575
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发表时间：
2023-03-03
影响因子：
2.7
通讯作者：
Hirohata，Atsufumi
中科院分区：
文献类型：
--
作者：
Zhou，Zhenyu;Frost，William;Hirohata，Atsufumi
最近的发展，在神经形态计算允许我们实现低功耗和高效的计算比传统的冯诺依曼计算。为了实现真实的突触操作，增强添加权重以加强选定的人工突触。这样的功能可以通过降低人工突触的电阻来实现。最近，用于磁阻结的铁磁Heusler合金已被证明通过引入电流脉冲经由逐层模式结晶。在这项研究中，我们已经扩展了电流诱导结晶结与外延生长的Heusler合金后退火结晶。通过将这种增强功能与神经形态操作相结合，可以开发出逼真的突触计算。
Recent development in neuromorphic computation allows us to achieve low power and highly efficient calculations better than the conventional von Neumann computation. In order to achieve realistic synaptic operation, potentiation to add weighting to strengthen a selected artificial synapse. Such functionality can be achieved by reducing the electrical resistance of the artificial synapse. Recently, a ferromagnetic Heusler alloy used in a magnetoresistive junction has been demonstrated to crystallise via the layer-by-layer mode by introducing an electrical current pulse. In this study, we have extended the current-induced crystallisation to a junction with epitaxially-grown Heusler alloy after post-annealing for crystallisation. By combining this potentiation functionality with the neuromorphic operation, realistic synaptic computation can be developed.