GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates
GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates
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DOI：
10.1063/1.2728744
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发表时间：
2007-05
影响因子：
3.2
通讯作者：
A. Alyamani;D. Sanvitto;A. A. Khalifa-A.;M. S. Skolnick;Tao Wang;F. Ranalli;P. Parbrook;A. Tahraoui;R. Airey
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文献类型：
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作者：
A. Alyamani;D. Sanvitto;A. A. Khalifa-A.;M. S. Skolnick;Tao Wang;F. Ranalli;P. Parbrook;A. Tahraoui;R. Airey
在GaN基单波长体微腔中，我们观察到了低温和室温下紫外波段激子-光子的强耦合。混合腔由腔下侧的25对外延生长的Al0.2Ga0.8N Al0.6Ga0.4N分布布拉格反射器（DBR）和9对Si 3 N4 SiO2作为上镜组成，获得高达160的腔Q值。在腔模和体GaN激子之间观察到反交叉，示出了具有43 meV的正常模式分裂的极化激元模式的形成。在反射率和光致发光中观察到较低的极化激元色散，在40 meV的大调谐范围内获得的两者之间具有良好的一致性。得到了与布拉格反射镜光谱的良好拟合。从模拟中发现，布拉格反射镜的反射率光谱不显着限制在Al 0.2Ga 0.8N层中的吸收。
We observe exciton-photon strong coupling at low and room temperature in the ultraviolet spectral region in a GaN-based one wavelength bulk microcavity. The hybrid cavity is composed of 25 pairs of epitaxially grown Al0.2Ga0.8N∕Al0.6Ga0.4N distributed Bragg reflectors (DBRs) on the lower side of the cavity and 9 pairs of Si3N4∕SiO2 as the upper mirror, to obtain cavity Q values up to 160. Anticrossing is observed between the cavity mode and the bulk GaN exciton, showing the formation of polariton modes with normal mode splitting of 43 meV. The lower polariton dispersion is observed in both reflectivity and photoluminescence, with good agreement between the two obtained over a large tuning range of 40 meV. Good fits are obtained to the spectra of the Bragg mirrors. From simulations it is found that the reflectivity spectra of the Bragg mirrors are not significantly limited by absorption in the Al0.2Ga0.8N layers.