Effect of Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films
Effect of Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films
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Mn掺杂对氧化铟锡薄膜结构、形貌、光磁性能的影响
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
A. Punnoose
中科院分区：
文献类型：
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作者：
K. Reddy;J. Hays;S. Kundu;L. Dua;P. Biswas;C. Wang;V. Shutthanandan;M. Engelhard;X. Mathew;A. Punnoose
我们报告了高纯锰（3-9重量%）的制备和表征掺杂的氧化铟锡（ITO，In：Sn = 90：10）薄膜。X射线衍射和选区电子衍射表明，高相纯度立方In 2 O 3和表示与Mn掺杂的晶格收缩。高分辨率透射电子显微镜描绘了一个均匀分布的20 nm大小的独立颗粒和颗粒诱导的X射线发射研究证实了实际的Mn离子浓度。UV-Vis漫反射测量显示在100-500 nm厚的ITO膜中的3.75 eV的带隙能量和高的光学透明度（90%）。In 3d 5/2（443.6 eV）、Sn 3d 5/2（485.6 eV）和Mn 2 p 3/2（640.2 eV）的X射线光电子能谱芯能级结合能表明了In 3+、Sn 4+和Mn 2+的氧化态。在300 K下记录的磁滞回线测得矫顽力Hc = 80 Oe，饱和磁化强度Ms = 0.39 μB/Mn ~（2+）离子。高温磁测量表明，3.2%Mn掺杂的ITO膜的居里温度Tc > 600 K。
We report on the preparation and characterization of high purity manganese (3–9 wt.%) doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol–gel mediated dip coating. X-ray diffraction and selected area electron diffraction showed high phase purity cubic In2O3 and indicated a contraction of the lattice with Mn doping. High-resolution transmission electron microscopy depicted a uniform distribution of ∼20 nm sized independent particles and particle induced x-ray emission studies confirmed the actual Mn ion concentration. UV-Vis diffuse reflectance measurements showed band gap energy of 3.75 eV and a high degree of optical transparency (90%) in the 100–500 nm thick ITO films. X-ray photoelectron spectroscopy core level binding energies for In 3d5/2 (443.6 eV), Sn 3d5/2 (485.6 eV) and Mn 2p3/2 (640.2 eV) indicated the In3+, Sn4+ and Mn2+ oxidation states. Magnetic hysteresis loops recorded at 300 K yield a coercivity Hc ∼ 80 Oe and saturation magnetization Ms ∼ 0.39 μB/Mn2+ ion. High-temperature magnetometry showed a Curie temperature Tc > 600 K for the 3.2% Mn doped ITO film.
影响因子：
15
作者：
Norberg, NS;Kittilstved, KR;Gamelin, DR
通讯作者：
Gamelin, DR