Influence of oxygen partial pressure on structural and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films deposited by pulsed laser deposition
Influence of oxygen partial pressure on structural and electrical properties of Mn1.56Co0.96Ni0.48O4 thin films deposited by pulsed laser deposition
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DOI：
10.1016/j.apsusc.2018.03.200
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发表时间：
2018-07-31
影响因子：
6.7
通讯作者：
Hou, Yun
中科院分区：
文献类型：
--
作者：
Di, Wenqi;Liu, Fang;Hou, Yun
采用脉冲激光沉积法在Al 2 O3衬底上制备了Mn1.56Co0.96Ni0.48O4（MCNO）尖晶石薄膜。研究了氧分压对MCNO薄膜结构和电学性能的影响。X射线衍射分析和原子力显微镜图像表明，氧分压对MCNO薄膜的晶化有影响。XPS谱表明，氧分压影响多价锰离子的比例。通过分析锰离子的分布和热电势，证实所制备的MCNO薄膜为p型半导体。在600 ℃下生长的MCNO薄膜的电阻率随氧分压的增加呈U型变化。在5.5 × 10 ~（-3）Pa ~ 6.5 × 10 ~（-3）Pa的最佳氧分压范围内，可以沉积出性能良好的MCNO薄膜，这对热敏电阻器件的性能是有利的。(C)2018爱思唯尔B. V.保留所有权利。
Mn1.56Co0.96Ni0.48O4 ( MCNO) spinel films were obtained on Al2O3 substrates by pulsed laser deposition method. The effects of oxygen partial pressure on structural and electrical properties of MCNO thin films were investigated. According to the X-ray diffraction analysis and the atomic force microscopy images, the oxygen partial pressure has influence on the crystallization of MCNO films. XPS spectra reveal that the oxygen partial pressure affects the proportion of the polyvalent manganese ions. By analyzing the distribution of manganese ions and the thermal potential, it was verified that the prepared MCNO films are p-type semiconductor. The resistivity of MCNO thin films grown at 600 degrees C is a change of U-type with the increasing of oxygen partial pressure. MCNO films with good characteristics can be deposited in the optimum oxygen partial pressure range of 5.5 x 10(-3) Pa to 6.5 x 10(-3) Pa, which is desirable for the favorable performance of thermistor devices. (C) 2018 Elsevier B.V. All rights reserved.