Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells
Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells
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n p InGaP 二极管和太阳能电池中 1 MeV 电子辐照引起的缺陷的热退火研究
DOI：
10.1063/1.1433936
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发表时间：
2002
影响因子：
3.2
通讯作者：
T. Takamoto
中科院分区：
文献类型：
--
作者：
Aurangzeb Khan;M. Yamaguchi;J. Bourgoin;T. Takamoto
该研究详细介绍了 n+/p InGaP 太阳能电池在 1 MeV 电子辐照后光伏参数的等温和等时退火恢复情况。太阳能电池特性与在辐照和退火的 n+/p InGaP 二极管和太阳能电池中观察到的深能级瞬态光谱数据变化的相关性表明，H2 (Ev+0.50 eV) 和 H3 (Ev+0.76 eV) 缺陷在控制少数载流子寿命和载流子去除方面起着主导作用。然而，电容-电压测量表明其他缺陷也必定在载流子去除过程中发挥作用。此外，室温储存40天后，H2缺陷的浓度显着衰减，这表明InGaP基太阳能电池在太空中将表现出优异的辐射耐受性。最后，深部类供体缺陷H2被初步鉴定为磷弗伦克尔对。
The study presents detailed isothermal and isochronal annealing recovery of photovoltaic parameters in n+/p InGaP solar cells after 1 MeV electron irradiation. Correlation of the solar cells characteristics with changes in the deep level transient spectroscopy data observed in irradiated and annealed n+/p InGaP diodes and solar cells shows that the H2 (Ev+0.50 eV) and H3 (Ev+0.76 eV) defects have a dominant role in governing the minority-carrier lifetime as well as carrier removal. However, capacitance–voltage measurements indicate that other defects must also play a role in the carrier removal process. In addition, the concentration of the H2 defect is found to decay significantly as a result of room temperature storage for 40 days, suggesting that InGaP-based solar cells will display superior radiation tolerance in space. Finally, the deep donor-like-defect H2 is tentatively identified as a phosphorus Frenkel pair.