A Simple Model of Negative Capacitance FET With Electrostatic Short Channel Effects
A Simple Model of Negative Capacitance FET With Electrostatic Short Channel Effects
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DOI：
10.1109/ted.2017.2706182
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发表时间：
2017-06
影响因子：
3.1
通讯作者：
Zhipeng Dong;Jing Guo
中科院分区：
文献类型：
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作者：
Zhipeng Dong;Jing Guo
提出了一种简单的负电容(NC)MOSFET模型。该模型处理2-D静电效应，以及弹道到扩散的传输模式。对于无内浮栅的NC MOSFET结构，它与基于泊松方程和基于非平衡格林函数形式的量子输运方程的自洽解的数值器件模拟显示出定量的一致。该模型能准确描述NC场效应管的反向漏极感生势垒降低(DIBL)和负输出微分电导(NDC)效应。结果表明，在低电源电压下，静电短沟道效应引起的亚阈值摆幅(SS)的改善将导致反向DIBL和NDC的线性增加。然而，对于具有与源极接触的超薄量子金属层的改进的NC MOSFET结构，在反向DIBL和NDC基本不变的情况下，SS可以得到显著改善。
A simple model of negative capacitance (NC) MOSFETs is presented. The model treats 2-D electrostatic effects, and the ballistic to diffusive transport regimes. It shows quantitative agreement with numerical device simulations based on a self-consistent solution of the Poisson equation and quantum transport equation based on nonequilibrium Green’s function formalism, for an NC MOSFET structure without an internal floating gate. The model can accurately describe the reverse drain-induced barrier lowering (DIBL) and negative output differential conductance (NDC) effects as the NC FETs scale down. With approximations valid at low power supply voltages, it is shown that the improvement of the subthreshold swing (SS) due to electrostatic short channel effects results in a linear increase of the reverse DIBL and NDC. For a modified NC MOSFET structure with an ultrathin quantum metallic layer contacted to the source, the SS, however, can be improved considerably with the reverse DIBL and NDC approximately unchanged.