Large magnetoresistance in spin- and carrier-doped SrTiO3 -: art. no. 052408
Large magnetoresistance in spin- and carrier-doped SrTiO3 -: art. no. 052408
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DOI：
10.1103/physrevb.72.052408
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发表时间：
2005-08-01
影响因子：
3.7
通讯作者：
Katsufuji, T
中科院分区：
文献类型：
--
作者：
Inaba, J;Katsufuji, T
我们研究了SrTiO_3，其中自旋和载流子分别通过Cr替代Ti和La替代Sr掺杂。有人发现，韦斯温度从负到正的值与载流子掺杂，表明通过传导载流子的Cr自旋之间的铁磁相互作用的外观。我们还发现，在这些化合物的负磁阻，其幅度达70%，在低温下。这些结果表明，具有大的磁电阻的磁性半导体可以获得基于传统的氧化物，如SrTiO 3，与自旋和载流子的独立掺杂。
We studied SrTiO3 into which spins and carriers are doped by Cr substitution for Ti and La substitution for Sr, respectively. It was found that Weiss temperatures vary from negative to positive values with carrier doping, indicating the appearance of a ferromagnetic interaction between Cr spins via the conduction carriers. We also found negative magnetoresistance in these compounds, whose magnitude amounts to 70% at low temperatures. These results demonstrate that magnetic semiconductors with large magnetoresistance can be obtained based on conventional oxides, like SrTiO3, with independent doping of spins and carriers.