Sulfurization temperature dependence of the structural transition in Cu2FeSnS4-based thin films
Sulfurization temperature dependence of the structural transition in Cu2FeSnS4-based thin films
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Cu2FeSnS4 基薄膜中结构转变的硫化温度依赖性
DOI：
10.1016/j.matlet.2015.09.013
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发表时间：
2015-12
影响因子：
3
通讯作者：
Chu Junhao
中科院分区：
文献类型：
--
作者：
Meng Xiankuan;Deng Hongmei;Sun Lin;Yang Pingxiong;Chu Junhao
采用磁控溅射技术结合后硫化工艺在镀Mo玻璃基片上制备了Cu 2FeSnS 4（CFTS）基薄膜。X射线能谱分析表明，随着硫化温度的升高，试样中Sn的含量逐渐降低，试样均处于贫Cu富Fe状态。X射线光电子能谱和X射线衍射表明，所有的相属于CFTS和没有杂质相，如Cu 2SnS 3，可以在薄膜中发现。但随着硫化温度的升高，样品呈现出由菱锡矿结构向锡铁矿结构的相变行为。利用经验模型估算了菱锡铁矿结构CFTS的A1模频率为323.8 cm-1，与拉曼光谱分析的实验值相吻合。这些结果有助于理解CFTS基薄膜的性质。
Cu2FeSnS4(CFTS)-based thin films have been prepared on Mo-coated glass substrates by magnetron sputtering technique combined with a post-sulfurization processing. Energy dispersive X-ray measurement indicates that the Sn content decreases with the increasing sulfurization temperature, and all samples are in Cu-poor and Fe-rich states. X-ray photoelectron spectroscopy and X-ray diffraction show that all phases belong to the CFTS and no impure phase, e.g. Cu2SnS3, can be discovered in thin films. However, samples exhibit a phase transition behavior from rhodostannite to stannite structure with the increasing sulfurization temperature. The frequency of A1mode of CFTS with rhodostannite structure is estimated to be 323.8 cm−1by using the empirical model, which coincides with the experimental value as measured by Raman spectra analysis. These results are helpful to understand the properties of CFTS-based thin films.
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