Novel Transfer Behaviors in 2D MoS2/WSe2 Heterotransistor and Its Applications in Visible‐Near Infrared Photodetection
Novel Transfer Behaviors in 2D MoS2/WSe2 Heterotransistor and Its Applications in Visible‐Near Infrared Photodetection
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DOI：
10.1002/aelm.201600502
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发表时间：
2017-04
影响因子：
6.2
通讯作者：
Mengxing Sun;Qiyi Fang;D. Xie;Yilin Sun;Jianlong Xu;Changjiu Teng;Ruixuan Dai;Pu Yang;Zhixin Li;Weiwei Li;Yanfeng Zhang
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文献类型：
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作者：
Mengxing Sun;Qiyi Fang;D. Xie;Yilin Sun;Jianlong Xu;Changjiu Teng;Ruixuan Dai;Pu Yang;Zhixin Li;Weiwei Li;Yanfeng Zhang
本文演示了基于单层MoS 2/多层WSe 2货车德瓦尔斯异质结的垂直集成光电晶体管的制造和操作。在栅调制效应下，器件结合了各组分的优点，在传输特性上表现出一种新的特征，即在小的栅压偏置下出现电流峰值，并表现出优良的光学宽带光电探测特性。在可见光照射（660 nm）下，光电探测能力达到最佳值，同时具有17.8 A W-1的光响应度，140的光敏度，该器件在近红外光（850 nm）照射下也显示出良好的光响应对近红外光光电探测起开关作用的栅电压依赖性明显。这种二维异质结构宽带光电探测器可以为未来可穿戴电子应用中的重要传感元件提供可用的器件结构。
This paper demonstrates the fabrication and operation of a vertically integrated phototransistor based on single‐layer MoS2/multilayer WSe2 van der Waals heterojunction. Under the gate modulation effects, the device which combines advantages of their constituents displays a novel feature in the transfer characteristics where a current peak appears at small gate voltage bias and exhibits excellent optical broadband photodetecting properties. Upon visible light illumination (660 nm), the photodetection capabilities reach the optimal values simultaneously with the photoresponsivity of 17.8 A W−1, photosensivity of 140, and the response speed of <80 ms. The device also shows good photoresponse under near‐infrared light illumination (850 nm) and the obvious dependence on the gate voltage which plays a switching role for near infrared light photodetection. This 2D heterostructured broadband photodetector may provide an available device structure for an essential sensing component in the future wearable electronics applications.