Enhancement of spin-orbit interaction and the effect of interface diffusion in quaternary InGaAsP/InGaAs heterostructures
Enhancement of spin-orbit interaction and the effect of interface diffusion in quaternary InGaAsP/InGaAs heterostructures
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DOI：
10.1103/physrevb.81.115118
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发表时间：
2010-03-01
影响因子：
3.7
通讯作者：
Nitta, Junsaku
中科院分区：
文献类型：
--
作者：
Kohda, Makoto;Nitta, Junsaku
通过同时控制四元InGaAsP/InGaAs异质界面中导带的价带偏移量和电子几率密度，增强了自旋-轨道相互作用。测量了弱反局域化以确定不同栅极偏置电压下Rashba自旋-轨道相互作用的强度，并通过对L.E.Golub[Phys.修订本B 71,235310(2005年)]。当片载流子密度N-S=2×10(11)cm(-2)时，拉什巴自旋-轨道相互作用参数增加到α=10.4×10(-12)eVm。为了通过与塞曼能量的比较来确定如此强的有效磁场，我们还测量了在面内磁场存在的情况下的弱反局域化。一个微弱的反局域化信号一直保持到B平行到=3.0T，这直接证明了InGaAsP/InGaAs异质结中有很强的自旋-轨道相互作用。考虑InGaAsP/InGaAs的界面扩散，得到的Rashba自旋-轨道相互作用参数α与由k中心点p理论得到的理论计算值是定量一致的。
The enhancement of spin-orbit interaction due to simultaneous control of both valence-band offset and electron probability density of the conduction band in a quaternary InGaAsP/InGaAs heterointerface is demonstrated. Weak antilocalization is measured to determine the strength of the Rashba spin-orbit interaction with different gate bias voltages and analyzed by quantum correction of the conductance developed by L. E. Golub [Phys. Rev. B 71, 235310 (2005)]. The Rashba spin-orbit interaction parameter is increased up to alpha=10.4x10(-12) eV m with sheet carrier density N-s=2x10(11) cm(-2). To confirm such a strong effective magnetic field by comparison with the Zeeman energy, we also measure weak antilocalization in the presence of the in-plane magnetic field. A weak antilocalization signal remains up to B-parallel to=3.0 T, resulting in direct evidence of strong spin-orbit interaction in the InGaAsP/InGaAs heterostructure. By taking the interface diffusion at the InGaAsP/InGaAs into account, the obtained Rashba spin-orbit interaction parameter alpha is found to be quantitatively consistent with theoretical calculation derived from the k center dot p theory.