Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors
Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors
复制标题
DOI：
10.1063/1.2939560
复制
发表时间：
2008-06-16
影响因子：
4
通讯作者：
Minami, N.
中科院分区：
文献类型：
--
作者：
Izard, N.;Kazaoui, S.;Minami, N.
据报道，由半导体单壁碳纳米管（s-SWNT）组成的场效应晶体管（FET）取得了实质性进展，且不含可检测到的金属纳米管和杂质。通过光学吸收、拉曼测量和电学测量证实金属纳米管几乎完美去除。这一出色的结果尤其是通过在甲苯中使用聚芴作为萃取剂对由 SWNT 粉末制备的溶液进行超速离心（150 000 g）而实现的。这种s-SWNTs可加工溶液用于实现FET，包括通过旋涂或介电泳制备的随机或优先取向的纳米管网络。器件在空气中表现出稳定的 p 型半导体行为，具有非常有前途的特性。开关电流比为10(5)，导通电流水平约为10μA，估计的空穴迁移率大于2cm(2)/V·s。
Substantial progress on field effect transistors (FETs) consisting of semiconducting single wall carbon nanotubes (s-SWNTs) without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic nanotubes is confirmed by optical absorption, Raman measurements, and electrical measurements. This outstanding result was made possible in particular by ultracentrifugation (150 000 g) of solutions prepared from SWNT powders using polyfluorene as an extracting agent in toluene. Such s-SWNTs processable solutions were applied to realize FET, embodying randomly or preferentially oriented nanotube networks prepared by spin coating or dielectrophoresis. Devices exhibit stable p-type semiconductor behavior in air with very promising characteristics. The on-off current ratio is 10(5), the on-current level is around 10 mu A, and the estimated hole mobility is larger than 2 cm(2)/V s.