Crystal growth and low coercive field 180° domain switching characteristics of stoichiometric LiTaO3
Crystal growth and low coercive field 180° domain switching characteristics of stoichiometric LiTaO3
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DOI：
10.1063/1.122676
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发表时间：
1998-11
影响因子：
4
通讯作者：
K. Kitamura;Y. Furukawa;K. Niwa;V. Gopalan;T. Mitchell
中科院分区：
文献类型：
--
作者：
K. Kitamura;Y. Furukawa;K. Niwa;V. Gopalan;T. Mitchell
用提拉法生长了成分接近化学计量比的LiTaO_3单晶。对化学计量比晶体和常规商用晶体进行了180°铁电畴翻转所需的切换场和非化学计量比点缺陷产生的内场的比较。居里温度为685°C的化学计量比晶体的磁畴反转的切换场为1.7kV/mm。这大约是居里温度接近600°C的传统LiTaO_3晶体所需开关电场的十三分之一。化学计量比晶体中的内场急剧降低到0.1kV/mm。
We grew LiTaO3 single crystals with a composition close to stoichiometry by using a double crucible Czochralski method. The switching field required for 180° ferroelectric domain reversal and the internal fields originating from nonstoichiometric point defects were compared for the stoichiometric and conventional commercially available crystals. The switching fields for the domain reversal in the stoichiometric crystal with a Curie temperature of 685 °C was 1.7 kV/mm. This is about one thirteenth of the switching field required for the conventional LiTaO3 crystals with a Curie temperature near 600 °C. The internal field in the stoichiometric crystal drastically decreased to 0.1 kV/mm.