DIRECT COMPARISON OF THE QUANTIZED HALL RESISTANCE IN GALLIUM-ARSENIDE AND SILICON
DIRECT COMPARISON OF THE QUANTIZED HALL RESISTANCE IN GALLIUM-ARSENIDE AND SILICON
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DOI：
10.1103/physrevlett.66.969
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发表时间：
1991-02-25
影响因子：
8.6
通讯作者：
GALLOWAY, T
中科院分区：
文献类型：
--
作者：
HARTLAND, A;JONES, K;GALLOWAY, T
利用超灵敏的低温电流比较器桥接，直接比较了GaAs/AlGaAs异质结构中量化霍尔电阻R(H)(2)与硅MOSFET中的R(H)(4)。测量结果表明，R(H)(2;GaAs)/R(H)(4;Si) = 2[1 -0.22（3.5） × 10(-10)]。在+/- 3.5 x 10（-10）的1-sigma组合不确定性范围内，结果表明量子化的霍尔电阻是一个普适量，与主晶格和朗道能级指数无关，可能相当于理论预测的h/e2。
Using an ultrasensitive, cryogenic, current-comparator bridge the quantized Hall resistance R(H)(2) in a GaAs/AlGaAs heterostructure has been compared directly with R(H)(4) in a silicon MOSFET. The measurements show that R(H)(2;GaAs)/R(H)(4;Si) = 2[1 -0.22(3.5) x 10(-10)]. Within the 1-sigma-combined uncertainty of +/- 3.5 x 10(-10) the result suggests that the quantized Hall resistance is a universal quantity, independent of the host lattice and Landau-level index, and is probably equivalent to h/e2, the relationship predicted theoretically.