Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells
Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells
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氮掺入 GaSb 基 GaInSb 量子阱的结构和光学研究
DOI：
10.1063/1.3675618
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发表时间：
2012
影响因子：
4
通讯作者：
S. Bank
中科院分区：
文献类型：
--
作者：
H. Nair;A. M. Crook;K. Yu;S. Bank
我们研究了在GaSb上生长的（Ga，In）Sb中氮的掺入，并报道了GaInSb（N）量子威尔斯的室温光致发光。X射线衍射和沟道核反应分析，连同卢瑟福背散射，被用来确定最佳的分子束外延生长条件，最大限度地减少了非取代氮纳入GaNSb。与该假设一致，在最小化非替代氮的条件下生长的GaInSb（N）量子威尔斯表现出室温光致发光，表明显著改善的辐射效率。这种材料系统的进一步发展可以使I型激光二极管在整个（3-5 μm）波长范围内发射。
We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 μm) wavelength range.