The effect of silicon doping in the selected barrier on the electroluminescence of InGaN/GaN multiquantum well light emitting diode
The effect of silicon doping in the selected barrier on the electroluminescence of InGaN/GaN multiquantum well light emitting diode
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DOI：
10.1063/1.2431717
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发表时间：
2007-01-15
影响因子：
4
通讯作者：
Yoo, Tae-Kyung
中科院分区：
文献类型：
--
作者：
Park, Eun-Hyun;Kang, David Nicol Hun;Yoo, Tae-Kyung
采用双波长发光二极管（LED）研究了选择势垒区硅掺杂对InGaN/GaN多量子阱发光二极管（LED）电致发光的影响。结果表明，掺杂硅势垒容易阻挡空穴的输运，主要的电子和空穴复合发生在p-GaN和掺杂硅势垒之间的威尔斯阱中。比较了掺硅发光二极管和未掺硅发光二极管的电致发光光谱和波长蓝移。通过数值模拟，解释了硅掺杂势垒对空穴的阻挡作用。(c)2007年，美国物理学会。
The effect of silicon doping in the selected barrier on the electroluminescence of InGaN/GaN multiquantum well light emitting diode (LED) was studied using dual wavelength LEDs. The result verified that the hole carrier transport is easily blocked by the silicon doped barrier, and the dominant electron and hole recombination occurs at the wells between p-GaN and the silicon doped barrier. The electroluminescence spectrum and the wavelength blueshift of the silicon doped LEDs were compared with undoped LEDs. The numerical simulation was done to clearly explain the hole blocking effect by the silicon doped barrier. (c) 2007 American Institute of Physics.