On the Texture of Electroless Copper Films on Epitaxial Cu Seed Layers Grown on Si (100) and Si (111) Substrates
On the Texture of Electroless Copper Films on Epitaxial Cu Seed Layers Grown on Si (100) and Si (111) Substrates
复制标题
Si(100)和Si(111)衬底上生长的外延铜籽晶层化学镀铜膜的织构研究
DOI：
10.1149/1.2069383
复制
发表时间：
1992
期刊：
影响因子：
--
通讯作者：
Y. Shacham
中科院分区：
文献类型：
--
作者：
Jian Li;Y. Shacham
研究了不同择优取向的铜籽晶层上化学镀铜膜的取向控制。电子束蒸发沉积的Cu膜与Si衬底呈外延关系，分别在（100）和（111）Si衬底上形成（100）和（111）取向的Cu膜。采用离子沟道、平面和截面透射电子显微镜以及X射线衍射等方法研究了化学镀铜层和电子束镀铜层之间的表面状态以及铜层对（100）和（111）晶向的依赖性
The orientation control of electroless copper films on copper seed layers with different preferential orientations was investigated. Copper films, deposited by electron-beam evaporation, show an epitaxial relationship with the Si substrates, resulting in (100)- and (111)-oriented Cu films on (100) and (111) Si substrates, respectively. Ion-channeling, plan-view and cross-sectional transmission electron microscopy and x-ray diffraction have been employed to investigate the orientation dependence of the copper layers on the copper seed layers with (100) and (111) orientations and surface condition between electroless copper and E-beam copper layers