Locally hydrazine doped WSe2 p-n junction toward high-performance photodetectors
Locally hydrazine doped WSe2 p-n junction toward high-performance photodetectors
复制标题
DOI：
10.1088/1361-6528/aa96e9
复制
发表时间：
2018-01
期刊：
影响因子：
3.5
通讯作者：
Mengxing Sun;D. Xie;Yilin Sun;Weiwei Li;T. Ren
中科院分区：
文献类型：
--
作者：
Mengxing Sun;D. Xie;Yilin Sun;Weiwei Li;T. Ren
Two dimensional (2D) materials have shown great potential in the photodetection and other optoelectronic applications. Exploiting 2D materials to form p-n junctions enables effective generation and separation of carriers excited by light, thus creating high-performance optoelectronic devices. This paper demonstrates a lateral WSe2 p-n junction through a locally hydrazine doping method. Good current-rectifying characteristics, including a high rectification ratio of ∼103, have been observed; this indicates that a high-quality p-n junction has been formed by chemical doping. Under light illumination, the device shows improved photoresponse capabilities with a responsivity of 30 mA W−1, a detectivity of 6.18 × 108 Jones, photocurrent/dark current ratio of 103 and a response time of 2 ms. These results suggest an effective way to get a p-n junction and reveal the application potential of the device for next generation photodetectors.
