Thermoluminescence and phosphorescence in natural and synthetic semiconducting diamond
Thermoluminescence and phosphorescence in natural and synthetic semiconducting diamond
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DOI:
10.1016/0022-2313(71)90039-1
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发表时间:
1971-12
影响因子:
3.6
通讯作者:
P. Walsh;E. C. Lightowlers;A. T. Collins
中科院分区:
文献类型:
--
作者:
P. Walsh;E. C. Lightowlers;A. T. Collins
Thermoluminescence glow curves from natural and synthetic semiconducting diamond, and from natural and synthetic insulating type lb diamonds, exhibit two peaks at ~ 150°K and ~ 250°K. The thermoluminescence has been excited either by photons withh⪆Egor by 20 keV electrons. Activation energies determined by the initial rise technique are 0.18 ± 0.05 eV and 0.35 ± 0.02 eV, respectively. For natural diamond the emission spectrum of the thermoluminescence glow consists of two bands centred near 1.85 eV and 2.6 eV, and the phosphorescence spectrum exhibits similar features. The creation of electrons and holes during excitation leads to the neutralization of compensated donors and acceptors. Electrons and holes on close separation donors and acceptors recombine radiatively during or shortly after excitation, and relatively isolated centres remain neutral at low temperatures. Holes released from shallow acceptors during subsequent heating are redistributed amongst available ionized acceptors by a continuous process of trapping and reionization. The thermoluminescence glow results from hole capture by ionized acceptors in close proximity to neutral donors when radiative recombination can take place. This is consistent with the change in spectral distribution of the glow from high to low energy during the thermoluminescence process and the increase in the order of kinetics which is discussed in the following paper.