Electroluminescent Y3Al5O12 nanofilms fabricated by atomic layer deposition on silicon: using Yb as the luminescent dopant and crystallization impetus
Electroluminescent Y3Al5O12 nanofilms fabricated by atomic layer deposition on silicon: using Yb as the luminescent dopant and crystallization impetus
复制标题
硅上原子层沉积制备电致发光Y3Al5O12纳米薄膜：以Yb作为发光掺杂剂和结晶推动力
DOI：
10.1364/oe.412776
复制
发表时间：
2021-01-04
期刊：
影响因子：
3.8
通讯作者：
Yang, Yang
中科院分区：
文献类型：
--
作者：
Xu, Jing;Liu, Jianzhao;Yang, Yang
采用原子层沉积法制备了硅基Yb掺杂Y3 Al 5 O 12石榴石纳米薄膜，经1150 ℃退火后为多晶。亚纳米成分调节和Yb 2 O3包覆层，也作为发光掺杂剂，是结晶的关键。在电注入条件下，Yb ~（3+）在1030 nm和970 nm处有特征发光，外量子效率为0.65%，荧光寿命为80-200 μ s。在Y3 Al 5 O 12基体中，通过Fowler-Nordheim隧穿机制产生的超热电子对掺杂的Yb 3+离子进行碰撞激发，激发截面为0.7 × 10 ~（-15）~ 6.4 × 10 ~（-15）cm ~（2）。这项工作证明了多氧化物纳米薄膜的设计组成和结晶度的操作，揭示了从结晶石榴石薄膜开发硅基光电器件的可能性。(c)2020年美国光学学会根据OSA开放获取出版的条款
Silicon-based Yb-doped Y3Al5O12 garnet nanofilms are fabricated by atomic layer deposition, which are polycrystalline after annealing at 1150 degrees C. The sub-nanometer compositional regulation and the Yb2O3 cladding layers, which also work as the luminescent dopants, are critical for the crystallization. Characteristic Yb3+ luminescence at 1030 nm and 970 nm is identified under electrical injection, exhibiting the external quantum efficiency of 0.65% and the fluorescence lifetime of 80-200 mu s. The doped Yb3+ are impact-excited by hot electrons stemming from Fowler-Nordheim tunneling mechanism within the Y3Al5O12 matrix, with the excitation cross section of 0.7x10(-15) to 6.4x10(-15) cm(2). This work certifies the manipulation of multi-oxide nanofilms with designed composition and crystallinity, revealing the possibility of developing Si-based optoelectronic devices from crystalline garnet films. (c) 2020 Optical Society of America under the terms of the OSA Open Access Publishing