Low energy electron microscopy study of In on Si(111)
Low energy electron microscopy study of In on Si(111)
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Si(111)上In的低能电子显微镜研究
DOI：
10.1116/1.1523370
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发表时间：
2002
影响因子：
1.4
通讯作者：
M. Giessen
中科院分区：
文献类型：
--
作者：
A. Pavlovska;E. Bauer;M. Giessen
用低能电子显微镜（LEEM）和低能电子衍射（LEED）研究了在不同温度下，在-100 ~550 °C范围内，In/Si（111）多相系统中的结构相变随覆盖度的变化。随着In覆盖率的增加，观察到的所有相变都是一阶的。新阶段的成核仅在前一阶段完成后开始。在高温下，只形成具有高原子密度的无序单层。室温下在（1.3 × 1.3）-R30°-In表面上沉积In，观察到四个新相：（2×1）相、近重合（1.5 × 1.3 ×1.5）相、“（1×1）-R30°”相和（6×6）相。在室温和高达至少400 °C下，形成双层。在120 °C以下，该层被压缩并有序地形成两种共存的结构，（107 × 103）和“（1×1）-R30°"。在120 °C以上，它显示出（1×1）LEED图案，这归因于Si（111）-（1×1）表面上的无序层。第三个单层的堆积密度是轻微压缩的...
The structural phase transitions in the multiphase system indium (In) on Si(111) are studied as a function of coverage at different temperatures between −100 and 550 °C by low energy electron microscopy (LEEM) and low energy electron diffraction (LEED). All phase transitions observed with increasing In coverage are first order. Nucleation of a new phase starts only after the previous phase is completed. At high temperatures only a disordered monolayer with high atomic density forms. When In is deposited at room temperature on a (√3×√3)-R30°–In surface four new phases are observed: a (2×1), a near coincidence (1.5√3×1.5√3), a “(1×1)-R30°” and a (6×6) phase. At room temperature and up at least to 400 °C a double layer forms. Below 120 °C this layer is compressed and ordered in two coexisting structures, (√7×√3) and “(1×1)-R30°”. Above 120 °C it shows a (1×1) LEED pattern, which is attributed to a disordered layer on the Si(111)-(1×1) surface. A third monolayer with the packing density of a slightly compress...