ATOMIC MIXING, SURFACE-ROUGHNESS AND INFORMATION DEPTH IN HIGH-RESOLUTION AES DEPTH PROFILING OF A GAAS/ALAS SUPERLATTICE STRUCTURE
ATOMIC MIXING, SURFACE-ROUGHNESS AND INFORMATION DEPTH IN HIGH-RESOLUTION AES DEPTH PROFILING OF A GAAS/ALAS SUPERLATTICE STRUCTURE
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DOI：
10.1002/sia.740210912
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发表时间：
1994-09-01
影响因子：
1.7
通讯作者：
HOFMANN, S
中科院分区：
文献类型：
--
作者：
HOFMANN, S
用1.0 keV和0.6 keV Ar+离子以80度入射角溅射，对单层厚度为8.8/9.9 nm的GaAs/AlAs超晶格结构进行了高分辨率AES深度谱分析，得到低能Al （68 eV）强度谱的0.6 keV Ar+离子DELTAz = 2.0 nm和高能Al （13% eV）强度谱的DELTAz = 2.0 nm的最佳深度分辨率值。采用原子混合(w)、表面粗糙度（sigma）和俄歇电子逃逸深度（lambda）影响的简单模型来计算测量剖面。对于0.6 keV的Ar+离子溅射，w = 1.0 nm, sigma = 0.6 nm, λ (Al 68 eV) = 0.4 nm, λ (Al 13% eV) = 1.7 nm。
High-resolution AES depth profiling of a GaAs/AlAs superlattice structure with 8.8/9.9 nm single-layer thickness by sputtering with 1.0 keV and 0.6 keV Ar+ ions at an incidence angle of 80-degrees resulted in optimum depth resolution values for 0.6 keV Ar+ ions of DELTAz = 2.0 nm for the low-energy Al (68 eV) intensity profile and of DELTAz = 2.0 nm for the high-energy Al (13% eV) intensity profile. A simple model description of the influence of atomic mixing (w), surface roughness (sigma) and Auger electron escape depth (lambda) was applied to calculate the measured profiles. An excellent fit is obtained by a reasonable set of these parameters: for 0.6 keV Ar+ ion sputtering, w = 1.0 nm, sigma = 0.6 nm, lambda (Al 68 eV) = 0.4 nm and lambda (Al 13% eV) = 1.7 nm.