Electronic structure evolution of Au, Ag, and Cu deposited on Al(100)
Electronic structure evolution of Au, Ag, and Cu deposited on Al(100)
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Al(100) 上沉积的 Au、Ag 和 Cu 的电子结构演化
DOI：
10.1116/1.571623
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发表时间：
1982
期刊：
影响因子：
--
通讯作者：
W. F. Egelhoff
中科院分区：
文献类型：
--
作者：
W. F. Egelhoff
本文用XPS研究了Al（100）衬底上Au、Ag和Cu从亚单层覆盖到体金属的电子结构演变。覆盖层的顺序由LEED监控。所有这三种元素都有一个共同的特征，即由芯能级结合能和价带形状决定的电子结构，在厚度达到约10至20个单层之前不会收敛于它们的体积值。由于这与表明在4层厚度附近收敛的理论计算截然不同，因此很明显，覆盖层生长模式与逐层结构截然不同。分析的数据表明，该结构可能由紧密堆积的簇的直径约等于膜的厚度。因此，这些系统代表了聚集成非常大的团簇（当覆盖层和基底之间的键合较弱时发生）和逐层聚集之间的中间情况。
The evolution of the electronic structure of Au, Ag, and Cu from submonolayer coverages up to bulk metal has been studied by XPS on an Al(100) substrate. The ordering of the overlayers is monitored by LEED. All three elements share the common feature that the electronic structure, as determined by the core level binding energies and the shape of the valence band, do not converge on their bulk values until a thickness of about 10 to 20 monolayers. Since this is drastically different from theoretical calculations indicating convergence around 4 layers thickness, it is clear that the overlayer growth mode is drastically different from a layer‐by‐layer structure. Analysis of the data indicates that the structure probably consists of tightly packed clusters with a diameter approximately equal to the thickness of the film. These systems thus represent an intermediate case between agglomeration into very large clusters (which occurs when the bonding between overlayer and substrate is weak) and a layer‐by‐layer g...