Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
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DOI：
10.1103/physrevlett.107.136603
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发表时间：
2011-09-19
影响因子：
8.6
通讯作者：
Sullivan, Gerard
中科院分区：
文献类型：
--
作者：
Knez, Ivan;Du, Rui-Rui;Sullivan, Gerard
本文对InAs/GaSb复合量子威尔斯阱杂化带隙中的低温电子输运进行了实验研究。静电门用于将费米能级推入差距区，其中测量电导与样本长度和宽度的函数关系。我们的分析显示了刘等人提出的螺旋边缘模式存在的强有力的证据[物理评论快报。100，236601（2008）]。边缘模式坚持，尽管相当大的体积传导，只显示出弱的磁场依赖性的直接后果的间隙开口远离区中心。
We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. An electrostatic gate is used to push the Fermi level into the gap regime, where the conductance as a function of sample length and width is measured. Our analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al [Phys. Rev. Lett. 100, 236601 (2008)]. Edge modes persist in spite of sizable bulk conduction and show only a weak magnetic field dependence-a direct consequence of a gap opening away from the zone center.