High-Pressure Rapid Preparation of High-Performance Binary Silver Sulfide Thermoelectric Materials
High-Pressure Rapid Preparation of High-Performance Binary Silver Sulfide Thermoelectric Materials
复制标题
高压快速制备高性能二元硫化银热电材料
DOI：
10.1021/acsaem.0c02810
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发表时间：
2021-02
影响因子：
6.4
通讯作者：
Zhai Pengcheng
中科院分区：
文献类型：
--
作者：
Wang Hongtao;Ma Haoqin;Duan Bo;Geng Huiyuan;Zhou Ling;Li Jialiang;Zhang Xiaolian;Yang Houjiang;Li Guodong;Zhai Pengcheng
银硫化物是一种无机半导体，具有非凡的机械性能，特别是在延展性方面。然而，热电器件中使用的硫化银的常规合成通常需要在高温下进行复杂且耗时的工艺。此外，制备过程中硫的损失导致组分难以控制。在这项工作中，高压方法的制备银硫化物在较低的制备温度（573 K）和较短的时间（10分钟）的发展。高压法的密闭空间防止了硫的流失，所得样品均为多孔结构。此外，Ag空位抑制Ag晶体的形成，从而优化载流子浓度并增强电输运性质。另一方面，多孔结构和Ag空位缺陷抑制晶格热导率。Ag 1.96 S在560 K下表现出最高的品质因数（ZT = 0.62），代表迄今为止二元银硫化物材料所实现的最高值。综上所述，本研究为制备高性能的硫化银基材料提供了一种快速、简便、组分可控的方法，具有广阔的应用前景。
Silver sulfide is an inorganic semiconductor with extraordinary mechanical properties, especially in terms of ductility. However, conventional synthesis of silver sulfide used in thermoelectrics commonly requires complex and time-consuming processes at high temperatures. Besides, the loss of sulfur during the preparation processes leads to difficult control over components. In this work, a high-pressure method is developed for the preparation of silver sulfide at reduced preparation temperature (573 K) and short time (10 min). The closed space of the high-pressure method prevents the sulfur loss, and all obtained samples show porous structures. Also, the Ag vacancies suppress the formation of Ag interstitials, thereby optimizing the carrier concentration and enhancing the electrical transport properties. On the other hand, the porous structures and Ag vacancy defects suppress the lattice thermal conductivities. Ag1.96S exhibits the highest figure of merit (ZT = 0.62) at 560 K, representing the highest value so far achieved by binary silver sulfide materials. In sum, a rapid, convenient, and component controllable approach is successfully developed for the preparation of high-performance silver sulfide-based materials with wide future application prospects.
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影响因子：
6.2
作者：
Sadovnikov, Stanislav, I;Vovkotrub, Emma G.
通讯作者：
Vovkotrub, Emma G.
半导体 α-Ag2S 的延性变形机制
影响因子：
9.7
作者：
Li, Guodong;An, Qi;Snyder, G. Jeffrey
通讯作者：
Snyder, G. Jeffrey
影响因子：
6.2
作者：
Li-dong Zhao;Boping Zhang;Jingfeng Li;Min Zhou;Weishu Liu;Jing Liu
通讯作者：
Li-dong Zhao;Boping Zhang;Jingfeng Li;Min Zhou;Weishu Liu;Jing Liu
影响因子：
9.4
作者：
Hualei Zhang;Xun Sun;S. Lu;Zhihua Dong;Xiangdong Ding;Yunzhi Wang;L. Vitos
通讯作者：
Hualei Zhang;Xun Sun;S. Lu;Zhihua Dong;Xiangdong Ding;Yunzhi Wang;L. Vitos
DOI：
10.1088/1361-6463/ab70c5
发表时间：
2020-03
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
作者：
Dongwang Yang;A. Benton;Jian He;Xinfeng Tang
通讯作者：
Dongwang Yang;A. Benton;Jian He;Xinfeng Tang