Annealing Conditions of Bi2Sr2CaCu2O8+x/CeO2/r-plane Sapphire by MOD Method
Annealing Conditions of Bi2Sr2CaCu2O8+x/CeO2/r-plane Sapphire by MOD Method
复制标题
Bi2Sr2CaCu2O8 x/CeO2/r面蓝宝石MOD法退火条件
DOI：
10.1016/j.phpro.2013.04.082
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
M. Takeda
中科院分区：
文献类型：
--
作者：
S. Suzuki;H. Shimakage;A. Kawakami;A. Saito;M. Takeda
用金属有机分解法(MOD)研究了CeO2缓冲的r面蓝宝石衬底上生长的Bi2Sr2CaCu2O8+x(Bi2212)薄膜。所沉积的Bi2212薄膜呈c轴取向，其面内取向具有4重对称性。然而，当薄膜在840℃以上的空气气氛中进行热处理时，我们遇到了一个问题，即Bi2212薄膜在热分解过程中被耗散。在本研究中，我们对Bi2212薄膜的退火条件进行了研究。研究发现，Bi-2212薄膜的热转变温度与气氛、退火次数等退火条件有关。在氮气气氛中840℃保温60min制备的Bi2212薄膜的相变温度为68.5K。另一方面，在氧气气氛中，在相同的退火条件下，Tc为65K。
We have been studying Bi2Sr2CaCu2O8+x (Bi-2212) thin films on CeO2 buffered r-plane sapphire substrates by a metal organic decomposition (MOD) method. The deposited Bi-2212 thin films showed the c-axis oriented, and the in-plane orientation of the films showed 4-fold symmetry. However, we had a problem that Bi-2212 thin films were dissipation by thermal decomposition when the thin films were annealed above 840°C in air atmosphere. In this study, we investigate the annealing conditions of Bi- 2212 thin films. We found TC of Bi-2212 thin films were dependence on the annealing condition such as a gas atmosphere and annealing times. The TC of Bi-2212 thin film annealed at 840°C for 60min in nitrogen atmosphere was 68.5K. On the other hand, in oxygen atmosphere, TC was 65K at the same annealing condition.