Thermoelectric Properties of Poly(3-hexylthiophene) (P3HT) Doped with 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) by Vapor-Phase Infiltration
Thermoelectric Properties of Poly(3-hexylthiophene) (P3HT) Doped with 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) by Vapor-Phase Infiltration
复制标题
DOI:
10.1021/acs.chemmater.7b04849
复制
发表时间:
2018-02-13
影响因子:
8.6
通讯作者:
Chabinyc, Michael L.
中科院分区:
文献类型:
--
作者:
Lim, Eunhee;Peterson, Kelly A.;Chabinyc, Michael L.
Doping of thin films of semiconducting polymers provides control of their electrical conductivity and thermopower. The electrical conductivity of semiconducting polymers rises nonlinearly with the carrier concentration, and there is a lack of understanding of the detailed factors that lead to this behavior. We report a study of the morphological effects of doping on the electrical conductivity of poly(3-hexylthiophene) (P3HT) thin films doped with small molecule 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ). Resonant soft X-ray scattering shows that the morphology of films of P3HT is not strongly changed by infiltration of F(4)TCNQ from the vapor phase. We show that the local ordering of P3HT, the texture and form factor of crystallites, and the long-range connectivity of crystalline domains contribute to the electrical conductivity in thin films. The thermopower of films of P3HT doped with F(4)TCNQ from the vapor phase is not strongly enhanced relative to films doped from solution, but the electrical conductivity is significantly higher, improving the thermoelectric power factor.