PHOTOLUMINESCENCE OF INGAN FILMS GROWN AT HIGH-TEMPERATURE BY METALORGANIC VAPOR-PHASE EPITAXY
PHOTOLUMINESCENCE OF INGAN FILMS GROWN AT HIGH-TEMPERATURE BY METALORGANIC VAPOR-PHASE EPITAXY
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DOI：
10.1063/1.106086
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发表时间：
1991-10-28
影响因子：
4
通讯作者：
KATSUI, A
中科院分区：
文献类型：
--
作者：
YOSHIMOTO, N;MATSUOKA, T;KATSUI, A
在（0001）面蓝宝石衬底上，通过金属有机物气相外延在800 ℃下生长InGaN单晶膜。通过使用如此高的温度进行生长，晶体质量得到了极大的改善。但是高的氮气过压和高的铟源流速对于在生长期间实现显著的铟掺入是必要的。首次在InGaN中观察到了光致发光，并在77 K的光致发光中观察到了近带边发射。从这种光致发光，近带边发射的铟的InGaN的摩尔分数的依赖关系进行了研究。
InGaN single-crystal films were grown on (0001) plane sapphire substrates at 800-degrees-C by metalorganic vapor phase epitaxy. By using such a high temperature for growth, the crystalline quality has been greatly improved. But a high nitrogen over pressure and high indium source flow rate were necessary to achieve significant indium incorporation during growth. For the first time, photoluminescence has been observed in InGaN, and near-band edge emission is seen in the photoluminescence at 77 K. From this photoluminescence, the dependence of a near-band edge emission on the indium mole fraction of InGaN has been investigated.