Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy
Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy
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DOI：
10.1103/physrevb.76.235416
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发表时间：
2007-11
影响因子：
3.7
通讯作者：
G. M. Rutter;N. Guisinger;Jason Crain;Emily A. A. Jarvis-Emily-A.-A.-Jarvis-2246516249;M. Stiles;Tianbo Li;P. First;J. Stroscio-J.-Stro
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文献类型：
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作者：
G. M. Rutter;N. Guisinger;Jason Crain;Emily A. A. Jarvis-Emily-A.-A.-Jarvis-2246516249;M. Stiles;Tianbo Li;P. First;J. Stroscio-J.-Stro
在碳化硅上外延生长的石墨烯已被提议作为碳基电子产品的材料。了解石墨烯和碳化硅衬底之间的界面对于未来的应用非常重要。我们报告了使用扫描隧道显微镜对单层石墨烯下方的界面结构进行成像的能力。这种成像是可能的，因为石墨烯在高于或低于费米能量 $({E}_{F})$ 的 $\ifmmode\pm\else\textpm\fi{}1\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ 能量下呈现透明。我们基于密度泛函理论的计算分析表明，这种透明度是如何由碳化硅基板上石墨烯层的电子结构产生的。
Graphene grown epitaxially on SiC has been proposed as a material for carbon-based electronics. Understanding the interface between graphene and the SiC substrate will be important for future applications. We report the ability to image the interface structure beneath single-layer graphene using scanning tunneling microscopy. Such imaging is possible because the graphene appears transparent at energies of $\ifmmode\pm\else\textpm\fi{}1\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ above or below the Fermi energy $({E}_{F})$. Our analysis of calculations based on density-functional theory shows how this transparency arises from the electronic structure of a graphene layer on a SiC substrate.