Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors
Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors
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DOI：
10.1021/nn9012466
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发表时间：
2010-03-01
期刊：
影响因子：
17.1
通讯作者：
Golberg, Dmitri
中科院分区：
文献类型：
--
作者：
Zhai, Tianyou;Fang, Xiaosheng;Golberg, Dmitri
首次采用热蒸发法制备了高质量的In2Se_3纳米线阵列，并研究了In2Se_3单根纳米线的光电导特性。单根In2Se3纳米线的电学表征证实了其本征的n型半导体行为。然后将这些单晶In2Se3纳米线组装在可见光传感器中，显示出快速、可逆和稳定的响应。这种高的光敏性和快速的光响应归因于优良的单晶质量和大的比表面积比，从而减少了纳米结构中的复合势垒。这些优异的性能清楚地表明了将In2Se3纳米线用于商业、军事和空间应用的下一代传感器和探测器的可能性。
The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photoconductive characteristics of In2Se3 individual nanowires are first investigated. The electrical characterization of a single In2Se3 nanowire verifies an intrinsic n-type semiconductor behavior. These single-crystalline In2Se3 nanowires are then assembled in visible-light sensors which demonstrate a fast, reversible, and stable response. The high photosensitivity and quick photoresponse are attributed to the superior single-crystal quality and large surface-to-volume ratio resulting in fewer recombination barriers in nanostructures. These excellent performances clearly demonstrate the possibility of using In2Se3 nanowires in next-generation sensors and detectors for commercial, military, and space applications.