Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate
Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate
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迁移增强型 MOCVD (MEMOCVDTM) 缓冲器可延长蓝宝石和 SiC 衬底上 GaN 和 AlGaN 外延层中的载流子寿命
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
M. Khan
中科院分区：
文献类型：
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作者：
R. Fareed;Jian Ping Zhang;R. Gaska;G. Tamulaitis;J. Mickevičius;R. Aleksieju̅nas;M. Shur;M. Khan
我们报道了使用迁移增强型金属有机化学气相沉积(MEMOCVDTM)缓冲器来延长生长在蓝宝石和碳化硅衬底上的GaN和AlGaN播放器中非平衡载流子的寿命。利用光致发光(PL)和光致栅法(LITG)对MEMOCVDTM多层缓冲层和常规缓冲层的GaN和AlGaN外延层进行了比较研究。对生长在蓝宝石和碳化硅衬底上的GaN层的测量表明，MEMOCVD缓冲层的载流子寿命分别超过300ps，比传统MOCVD缓冲层的载流子寿命高4倍以上。在AlGaN层中，与常规MOCVD层相比，MEMOCVD缓冲层的发光强度增加可能是由于缺陷密度的降低。LITG结果还表明，与传统缓冲层相比，采用MEMOCVD AlN缓冲层的Al0.23Ga0.77N(大于190ps)的载流子寿命更高。(2015Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
We report on using Migration Enhanced Metal Organic Chemical Vapor Deposition (MEMOCVDTM) buffers for increasing lifetime of non-equilibrium carriers in GaN and AlGaN players grown on sapphire and SiC substrates. Photoluminescence (PL) and the light-induced grating technique (LITG) were used for the comparative study of the GaN and AlGaN epilayers with the MEMOCVDTM multilayered buffers and with conventional buffers. Measurements on GaN layers grown on sapphire and SiC show carrier lifetime more than 300 ps respectively with MEMOCVD buffer layers which is more than 4 times higher compared to the layers on conventional MOCVD buffers. In the AlGaN layers, PL intensity increases for MEMOCVD buffer layer compared to conventional MOCVD layers possibly due to reduction in defect density. The LITG results also show higher carrier lifetime for Al0.23Ga0.77N (more than 190ps) with MEMOCVD AlN buffers compared to layers with conventional buffer layers. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)