Vapor Hydrofluoric Acid Sacrificial Release Technique for Micro Electro Mechanical Systems Using Labware
Vapor Hydrofluoric Acid Sacrificial Release Technique for Micro Electro Mechanical Systems Using Labware
复制标题
使用实验室器具的微机电系统的蒸气氢氟酸牺牲释放技术
DOI：
10.1143/jjap.42.3690
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发表时间：
2003
影响因子：
1.5
通讯作者：
H. Toshiyoshi
中科院分区：
文献类型：
--
作者：
Y. Fukuta;H. Fujita;H. Toshiyoshi
我们开发了一种用于微机电系统（MEMS）的牺牲层刻蚀新技术。我们的技术是利用氢氟酸（HF）的蒸气来蚀刻牺牲的氧化硅并制造独立的硅微结构。这种技术的优点是：(1)不需要后续的水冲洗，(2)独立的硅微结构可以成功地释放，而不会粘在衬底上，(3)我们的气相HF蚀刻设备仅由特氟龙烧杯组成。通过估算绝缘体上硅（SOI）晶圆的蚀刻速率和观察热氧化硅片表面的水滴凝结，优化了该技术的条件。通过这种技术，我们成功地获得了SOI晶圆的独立微结构。长达5000 μ m的微悬臂（5 μ m宽，10 μ m厚，5000 μ m长，0.6 μ m间隙的悬臂）已成功释放，而不粘附在基板上或接触邻近的悬臂。我们还制造并驱动了60对和200对梳子的静电梳子驱动驱动器，以证明我们的不粘释放技术的高加工成品率。
We have developed a novel technique of sacrificial layer etching for micro electro mechanical systems (MEMS). Our technique uses vapor of hydrofluoric acid (HF) to etch sacrificial silicon oxide and to make freestanding silicon microstructures. The advantages of this technique are: (1) no subsequent water rinse is needed, (2) freestanding silicon microstructures can be successfully released without sticking to the substrate, (3) equipment for our vapor phase HF etching simply consists of Teflon beakers only. Conditions for the technique have been optimized by estimating etching rate with test patterns made of silicon-on-insulator (SOI) wafers and by observing water droplets condensation on the sample surface with thermally oxidized silicon chips. By this technique we have successfully obtained freestanding microstructures of SOI wafers. Microcantilevers of as long as 5000 µm (a 5-µm-wide, 10-µm-thick, and 5000-µm-long cantilever over a 0.6-µm-gap) have been successfully released without adhering to the base substrate or contacting the neighboring cantilevers. We have also fabricated and actuated electrostatic comb-drive actuators of 60 and 200 comb pairs to demonstrate high processing yield of our nonstick releasing technique.