Electroluminescence and charge storage characteristics of quantum confined germanium nanocrystals
Electroluminescence and charge storage characteristics of quantum confined germanium nanocrystals
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DOI：
10.1063/1.3610396
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发表时间：
2011-07
影响因子：
3.2
通讯作者：
Samaresh Das;R. Singha;A. Dhar;S. Ray;A. Anopchenko;N. Daldosso;Lorenzo Pavesi
中科院分区：
文献类型：
--
作者：
Samaresh Das;R. Singha;A. Dhar;S. Ray;A. Anopchenko;N. Daldosso;Lorenzo Pavesi
采用与硅兼容的制备技术，合成了镶嵌在高禁带高k Al_2O_3介电基质中的量子受限Ge纳米晶，展示了双功能器件。透射电子显微镜显示形成了直径从2.5到7.5 nm不等的Ge纳米晶，远低于Ge的激子玻尔半径。在室温下观察到了一个很宽的可见电致发光带，这是由于注入的电子和Ge纳米晶体中的空穴复合所致。在这些器件的电容-电压测量中出现的逆时针滞后表明电荷存储在纳米晶体中，这对浮栅存储器件是有用的。
Quantum confined Ge nanocrystals embedded in high bandgap and high-k Al2O3 dielectric matrix have been synthesized to demonstrate dual functional devices using Si-compatible fabrication technology. Transmission electron microscopy has shown the formation of Ge nanocrystals of varying diameter from 2.5 to 7.5 nm, much lower than the excitonic Bohr radius of Ge. A broad visible electroluminescence band at room temperature has been observed, which is attributed to the recombination of injected electrons and holes in Ge nanocrystals. An anti-clockwise hysteresis in the capacitance-voltage measurement of these devices indicates the charge storage in nanocrystals, useful for floating gate memory devices.