Device Simulation with Quasi Three-Dimensional Temperature Analysis for Short-Channel Poly-Si Thin-Film Transistor
Device Simulation with Quasi Three-Dimensional Temperature Analysis for Short-Channel Poly-Si Thin-Film Transistor
复制标题
短沟道多晶硅薄膜晶体管的准三维温度分析器件仿真
DOI：
10.1143/jjap.33.619
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
M. Koyanagi
中科院分区：
文献类型：
--
作者：
T. Shimatani;T. Matsumoto;T. Hashimoto;N. Kato;S. Yamada;M. Koyanagi
一种用于准三维温度分析的新型多晶硅薄膜晶体管（TFT）器件模拟器已经开发出来。在该模拟器中，当求解基本半导体方程时，晶界的影响被纳入迁移率模型中。此外，我们使用准三维温度分析考虑了由于绝缘基板的导热系数较小而产生的自热效应。使用可以准确分析短沟道多晶硅TFT中的温升效应和雪崩短沟道效应
A new poly-Si thin-film transistor (TFT) device simulator for quasi three-dimensional temperature analysis has been developed. In this simulator, the influences of the grain boundaries are incorporated into the mobility model when the basic semiconductor equations are solved. Furthermore, we have taken into account the self-heating effect owing to a small thermal conductivity of the insulating substrate using quasi three-dimensional temperature analysis. Use could accurately analyse the temperature rise effect and the avalanche short-channel effect in the short-channel poly-Si TFT