A Low-Voltage Low-Loss Active Reflected Wave Canceller for a Medium-Voltage SiC Motor Drive Based on a Generalized Multilevel Inverter Topology

A Low-Voltage Low-Loss Active Reflected Wave Canceller for a Medium-Voltage SiC Motor Drive Based on a Generalized Multilevel Inverter Topology
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基于通用多电平逆变器拓扑的中压 SiC 电机驱动低压低损耗有源反射波消除器

DOI:
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发表时间:
2022
影响因子:
5.5
通讯作者:
F. Peng
F. Peng
中科院分区:
工程技术1区
文献类型:
--
作者:
Yu Zhang;Hui Li;Zhehui Guo;F. Peng

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用于中压(MV)电机驱动的具有SiC器件的多电平拓扑具有减少谐波和器件电压应力并提高效率的优点。然而,随着SiC器件的应用,由于其高dv/dt,在多电平电机驱动中仍然会发生反射波现象,导致电机端部过电压。本文提出了一种基于T型电路的有源反射波消除器(ARWC),用于抑制M电平电机驱动器的过电压,其额定电压降低为<inline-formula><tex-math notation="LaTeX">$V_{mathrm {dc}}$</tex-math></inline-formula>/(<inline-formula><tex-math notation="LaTeX">$M-1$</tex-math></inline-formula>)。一个耦合电感被应用于隔离的ARWC输出和主逆变器。此外,耦合电感器设计有小电阻,以允许低电流流入ARWC。所提出的ARWC结构可以应用于一般的多电平拓扑。在实验室搭建了一台采用3.3kV SiC器件的三电平ANPC变换器。一个1.2 kV的SiC模块应用在建议的ARWC。在1.6 kV<inline-formula><tex-math notation="LaTeX">$V_{mathrm {dc}}$</tex-math></inline-formula>和16 A(rms)的负载电流与不建议的ARWC的实验结果提供和比较,以验证所提出的方法的有效性。
Multilevel topologies with SiC devices for medium-voltage (MV) motor drive have advantages to reduce the harmonics and device voltage stress and increase efficiency. However, with the application of SiC devices, the reflected wave phenomenon still happens in multilevel motor drives due to its high dv/dt, resulting in overvoltage at motor terminals. This article proposed a T-type circuit-based active reflected wave canceller (ARWC) to suppress the overvoltage of an M-level motor drive with a reduced voltage rating of <inline-formula> <tex-math notation="LaTeX">$V_{mathrm {dc}}$ </tex-math></inline-formula>/(<inline-formula> <tex-math notation="LaTeX">$M-1$ </tex-math></inline-formula>). A coupled inductor is applied to isolate the ARWC output and the main inverter. In addition, the coupled inductor is designed with a small resistor to allow low current flow into ARWC. The proposed ARWC configuration can be applied for general multilevel topologies. A three-level ANPC converter with a 3.3-kV SiC device is built in the laboratory. A 1.2-kV SiC module is applied in the proposed ARWC. The experimental results at 1.6-kV <inline-formula> <tex-math notation="LaTeX">$V_{mathrm {dc}}$ </tex-math></inline-formula> and 16-A (rms) load current with and without proposed ARWC are provided and compared to verify the validity of the proposed method.