Development of High Thermal Conductivity Aluminum Nitride Ceramic
Development of High Thermal Conductivity Aluminum Nitride Ceramic
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DOI：
10.1111/j.1151-2916.1991.tb08291.x
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发表时间：
1991-09
影响因子：
3.9
通讯作者：
R. Lee
中科院分区：
文献类型：
--
作者：
R. Lee
AIN陶瓷的密度从3.18到3.30 g/cm3不等，室温导热系数从88到193 W/m K不等。对不同的烧结条件、填料粉、AIN粉源、碳添加剂和烧结时间进行了评价，确定了导致密度和导热系数差异的关键工艺参数。利用扫描电镜、透射电镜和能谱分析表征了热导率、微观结构和工艺参数之间的关系。讨论了控制AIN陶瓷导热性能的重要参数。
AIN ceramics with densities varying from 3.18 to 3.30 g/cm3 and room-temperature thermal conductivities varying from 88 to 193 W/m K were produced. Different sintering conditions, packing powders, AIN powder sources, carbon additive, and sintering times were evaluated, and the key processing parameters which cause the differences in density and thermal conductivity were identified. SEM, TEM, and EDS were used to characterize the correlation between thermal conductivity, microstructure, and processing parameters. The important parameters which control the thermal conductivity of AIN ceramics are discussed.