The effect of random variations of structure parameters on photonic band gaps of one-dimensional plasma photonic crystals
The effect of random variations of structure parameters on photonic band gaps of one-dimensional plasma photonic crystals
复制标题
结构参数随机变化对一维等离子体光子晶体光子带隙的影响
DOI:
10.1016/j.optcom.2011.02.043
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发表时间:
2011-06
影响因子:
2.4
通讯作者:
Guan, He-lan
中科院分区:
文献类型:
--
作者:
Kong, Xiang-kun;Liu, Shao-bin;Zhang, Hai-feng;Guan, He-lan
The electromagnetic properties of one-dimensional plasma photonic crystals influenced by random perturbation of structure parameters are studied through transfer matrix method in the paper. The random perturbation of thicknesses of layers as well as plasma frequency of layers can influence the electromagnetic properties of one-dimensional plasma photonic crystal. The random perturbation of thicknesses of layers tremendously impacts the band structure of one-dimensional plasma photonic crystals in high frequency domain. The random perturbation of plasma frequency, however, contributes to the moving of a cutoff frequency in the low frequency domain. The position of the defect mode of one-dimensional plasma photonic crystal randomly moves due to the random perturbations. The effect of random perturbation of plasma frequency is more significant than that of random perturbation of thickness of layers, which alters not only the transmittance but also the position of the defect mode. An improved quality factor and a shortened moving distance of the defect mode are both acquired by increasing the period number. And then this work may provide a crude but useful instrument in analyzing disordered 1DPPCs.
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DOI:
10.7498/aps.55.1283
发表时间:
2006-03
期刊:
--
影响因子:
--
作者:
Shao-Bin Liu;Chang-Qing Gu;Jianjiang Zhou;Nai-chang Yuan
通讯作者:
Shao-Bin Liu;Chang-Qing Gu;Jianjiang Zhou;Nai-chang Yuan
影响因子:
3.7
作者:
W. R. Frei;H. Johnson
通讯作者:
W. R. Frei;H. Johnson
影响因子:
8.6
作者:
YABLONOVITCH, E
通讯作者:
YABLONOVITCH, E
影响因子:
3.7
作者:
H. S. Sozuer;K. Sevim
通讯作者:
H. S. Sozuer;K. Sevim
影响因子:
3.7
作者:
M. Sigalas;C. Soukoulis;C. Chan;R. Biswas;K. Ho
通讯作者:
M. Sigalas;C. Soukoulis;C. Chan;R. Biswas;K. Ho