Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates
Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates
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DOI：
10.1109/led.2009.2020699
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发表时间：
2009-06-01
影响因子：
4.9
通讯作者：
Gaskill, D. K.
中科院分区：
文献类型：
--
作者：
Moon, J. S.;Curtis, D.;Gaskill, D. K.
我们报告了直流和首次测量的小信号射频（RF）性能的外延石墨烯RF场效应晶体管（FET），其中外延石墨烯层是由2英寸直径的Si面半绝缘6 H-SiC（0001）衬底的石墨化形成的。该栅极通过在经由原子层沉积方法沉积的高k Al 2 O3栅极电介质的顶部上的金属栅极来处理。当栅长（L-g）为2 μ m，非本征势垒为148 mS/mm时，非本征电流增益截止频率（f（T））为4.4 GHz，得到非本征f（T）。L-g为8.8 GHz。嗯。这与Si NMOS的情况相当。使用以类似于Si n-MOSFET的布局制造的石墨烯FET，导通状态电流密度在Vds = 1 V时急剧增加到高达1.18 A/mm，在Vds = 5 V时增加到3 A/mm。电流驱动水平是在任何半导体FET中观察到的最高水平。
We report dc and the first-ever measured small-signal radio-frequency (RF) performance of epitaxial-graphene RF field-effect transistors (FETs), where the epitaxial-graphene layer is formed by graphitization of 2-in-diameter Si-face semi-insulating 6H-SiC (0001) substrates. The gate is processed with a metal gate on top of a high-k Al2O3 gate dielectric deposited via an atomic-layer-deposition method. With a gate length (L-g) of 2 mu m and an extrinsic transconductance of 148 mS/mm, the extrinsic current-gain cutoff frequency (f(T)) is measured as 4.4 GHz, yielding an extrinsic f(T) . L-g of 8.8 GHz . mu m. This is comparable to that of Si NMOS. With graphene FETs fabricated in a layout similar to those of Si n-MOSFETs, ON-state current density increases dramatically to as high as 1.18 A/mm at Vds = 1 V and 3 A/mm at Vds = 5 V. The current drive level is the highest ever observed in any semiconductor FETs.