High speed, high analog bandwidth buck converter using GaN HEMTs for envelope tracking power amplifier applications
High speed, high analog bandwidth buck converter using GaN HEMTs for envelope tracking power amplifier applications
复制标题
使用 GaN HEMT 的高速、高模拟带宽降压转换器，用于包络跟踪功率放大器应用
DOI：
10.1109/wisnet.2013.6488618
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
P. Asbeck
中科院分区：
文献类型：
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作者：
S. Shinjo;Young;H. Gheidi;D. Kimball;P. Asbeck
我们报道了一种基于GaN HEMT的DC/DC转换器，开关频率高于200 MHz，可用于产生用于包络跟踪功率放大器的包络调制电源电压。该转换器由0.7微米GaN HEMT开关电路、电感和低通滤波器组成，可提供20V以上的输出电压。在开关频率为200 MHz的情况下，为20 MHz的LTE信号产生了包络电源电压，效率为%(包括末级和驱动级的损耗；末级效率为90%)。据我们所知，这是第一个使用GaN HEMT的用于包络放大器的高速DC/DC转换器的演示。
We report a DC/DC converter based on GaN HEMTs with a switching frequency above 200 MHz that can be used to generate envelope-modulated power supply voltages for use in envelope tracking power amplifiers. The converter consists of switching circuits using 0.7-um GaN HEMTs, inductor, and low pass filter, and can provide output voltages above 20V. Generation of envelope power supply voltages for 20 MHz LTE signals was demonstrated using 200 MHz switching rates with efficiency of 64% (including dissipation in final and drivers stages; final stage efficiency was 90%). To the best of our knowledge, this is the first demonstration of high speed dc/dc converters for envelope amplifiers using GaN HEMTs.