Electric-field-induced two-dimensional hole gas in undoped GaSb quantum wells
Electric-field-induced two-dimensional hole gas in undoped GaSb quantum wells
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DOI：
10.1063/1.5093133
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发表时间：
2019-06
影响因子：
4
通讯作者：
K. Shibata;M. Karalic;C. Mittag;T. Tschirky;C. Reichl;H. Ito;Kunihiko Hashimoto;T. Tomimatsu;Y. Hirayama;W. Wegscheider;T. Ihn;K. Ensslin
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文献类型：
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作者：
K. Shibata;M. Karalic;C. Mittag;T. Tschirky;C. Reichl;H. Ito;Kunihiko Hashimoto;T. Tomimatsu;Y. Hirayama;W. Wegscheider;T. Ihn;K. Ensslin
我们测量了未掺杂GaSb/AlSb量子威尔斯阱中电致二维空穴气的空穴输运。为了进入GaSb量子威尔斯中的电感应二维空穴气体，形成了凹陷的欧姆接触，并测量了栅极定义的霍尔条几何形状的低温磁阻。样品的迁移率随着空穴密度的增加而增加，对于8 nm厚的GaSb量子阱，在空穴密度为5.3 × 1011 cm−2时达到20 000 cm 2/V s。纵向和霍尔双折射率分别表现出Shubnikov-de哈斯振荡和整数量子霍尔平台。这些结果为利用这种材料的强自旋轨道相互作用实现自旋电子学奠定了基础，也有助于理解InAs/GaSb双量子阱结构中实现的二维拓扑绝缘体的输运性质。我们测量了未掺杂GaSb/AlSb量子威尔斯阱中电致二维空穴气体的空穴输运。为了进入GaSb量子威尔斯中的电感应二维空穴气体，形成了凹陷的欧姆接触，并测量了栅极定义的霍尔条几何形状的低温磁阻。样品的迁移率随着空穴密度的增加而增加，对于8 nm厚的GaSb量子阱，在空穴密度为5.3 × 1011 cm−2时达到20 000 cm 2/V s。纵向和霍尔双折射率分别表现出Shubnikov-de哈斯振荡和整数量子霍尔平台。这些结果建立了一个平台，实现自旋为基础的电子学利用这种材料的强自旋轨道相互作用，也是有用的理解的二维拓扑绝缘体中实现的InAs/GaSb双量子阱结构的输运性质。
We have measured hole transport in electrically induced two-dimensional hole gases in undoped GaSb/AlSb quantum wells. In order to access the electrically induced two-dimensional hole gas in GaSb quantum wells, recessed ohmic contacts were formed and the low-temperature magnetoresistance was measured for a gate-defined Hall bar geometry. The mobility of the sample increases with increasing hole density and reaches 20 000 cm2/V s at a hole density of 5.3 × 1011 cm−2 for an 8-nm-thick GaSb quantum well. The longitudinal and Hall resistivities show Shubnikov–de Haas oscillations and integer quantum Hall plateaus, respectively. These results establish a platform for realizing spin-based electronics using the strong spin–orbit interaction of this material and are also useful for understanding the transport properties of the two-dimensional topological insulator realized in InAs/GaSb double quantum well structures.We have measured hole transport in electrically induced two-dimensional hole gases in undoped GaSb/AlSb quantum wells. In order to access the electrically induced two-dimensional hole gas in GaSb quantum wells, recessed ohmic contacts were formed and the low-temperature magnetoresistance was measured for a gate-defined Hall bar geometry. The mobility of the sample increases with increasing hole density and reaches 20 000 cm2/V s at a hole density of 5.3 × 1011 cm−2 for an 8-nm-thick GaSb quantum well. The longitudinal and Hall resistivities show Shubnikov–de Haas oscillations and integer quantum Hall plateaus, respectively. These results establish a platform for realizing spin-based electronics using the strong spin–orbit interaction of this material and are also useful for understanding the transport properties of the two-dimensional topological insulator realized in InAs/GaSb double quantum well structures.