Photoluminescence study of hydrogen passivation in InAs1−xNx/InGaAs single-quantum well on InP
Photoluminescence study of hydrogen passivation in InAs1−xNx/InGaAs single-quantum well on InP
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InAs1−xNx/InGaAs 单量子阱中 InP 氢钝化的光致发光研究
DOI：
10.1063/1.1476383
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发表时间：
2002
影响因子：
4
通讯作者：
Hung
中科院分区：
文献类型：
--
作者：
Y. Ke;M. Ya;Yang;J. Wang;Hung
众所周知，氮掺入III-V族化合物会降低材料的质量。在这封信中，我们表明，掺入原子氢到InAsN/InGaAs量子威尔斯可以有效地钝化缺陷，并导致带边附近的光致发光强度的增强。氢化后光学性质的变化与氮气处理后的退火有很大不同。例如，在氢化之后线宽变得更宽，而在氮气退火之后线宽变窄。通过对光致发光谱的详细研究，我们发现氢化过程中缺陷键的钝化是导致光学性能改善的主要原因，而氮退火后的变化则是由于相互扩散的影响。
It is well known that nitrogen incorporation into III–V compounds will degrade the quality of materials. In this letter, we show that the incorporation of atomic hydrogen into InAsN/InGaAs quantum wells can effectively passivate defects and lead to enhancement of photoluminescence intensity near the band edge. After hydrogenation, the change of the optical properties is quite different from that of the annealing with nitrogen treatment. For instance, the linewidth becomes wider after hydrogenation, while the linewidth is narrower after nitrogen annealing. Through a detailed study of the photoluminescence spectra, we show that the passivation of defect bonds is the main reason for the improved optical behavior for hydrogenation, while the interdiffusion is responsible for the change after nitrogen annealing.