HALL MEASUREMENTS AND CONTACT RESISTANCE IN DOPED GAN/ALGAN HETEROSTRUCTURES
HALL MEASUREMENTS AND CONTACT RESISTANCE IN DOPED GAN/ALGAN HETEROSTRUCTURES
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掺杂 GAN/ALGAN 异质结构中的霍尔测量和接触电阻
DOI：
10.1063/1.116684
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发表时间：
1996
影响因子：
4
通讯作者：
Qin
中科院分区：
文献类型：
--
作者：
M. Khan;M. Shur;Qin
我们报道了掺杂AlGaN/GaN异质结构，其具有非常高的薄层电子浓度值（高达约1.5×1013 cm−2），高霍尔迁移率（约800 cm 2/Vs）和高薄层浓度迁移率乘积（高达约1016 1/Vs）。这些层的接触电阻的传输线模型测量表明，通过掺杂GaN沟道，串联电阻大大降低。对于具有最高薄层载流子浓度的结构，证明了2.3 Ω mm的接触电阻，其对应于1.88 ×10−5 Ω cm 2的比接触电阻。
We report on doped AlGaN/GaN heterostructures with very high values of the sheet electron concentration (up to approximately 1.5×1013 cm−2), high Hall mobility (on the order of 800 cm2/Vs) and high sheet concentration‐mobility product (up to approximately 1016 1/Vs). Transmission line model measurements of the contact resistance to these layers show that series resistance is considerably reduced by doping the GaN channel. A contact resistance of 2.3 Ω mm is demonstrated for the structure with the highest sheet carrier concentration, which corresponds to ≊8.8×10−5 Ω cm2 specific contact resistance.