Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells
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DOI：
10.1063/1.359628
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发表时间：
1995
影响因子：
3.2
通讯作者：
W. Shen;S. Shen;W. Tang;Y. Zhao;A. Li
中科院分区：
文献类型：
--
作者：
W. Shen;S. Shen;W. Tang;Y. Zhao;A. Li
We report the dependence on the excitation power and temperature of the photoluminescence emission from a quaternary Ga0.75In0.25As0.04Sb0.96/Al0.22Ga0.78As 02Sb0.98 strained multiple‐ quantum‐well structure grown by molecular‐beam epitaxy. Sharp exciton resonances are observed up to room temperature and have been attributed to localized excitons for temperatures ≤80–100 K and to free excitons at higher temperatures up to room temperature by a comparative study with temperature‐dependent absorption spectroscopy. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly due to the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy‐hole subbands to the second electron and heavy‐hole subbands at higher temperatures.
