Light emitting from the self-interstitial clusters buried in the Si + self-ion implanted Si films
Light emitting from the self-interstitial clusters buried in the Si + self-ion implanted Si films
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DOI：
10.1049/mnl.2016.0511
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发表时间：
2017-04
影响因子：
1.3
通讯作者：
Ouyang Lingxi;Chong Wang;Mengwei Zhou;Jie Yang;Yu Yang
中科院分区：
文献类型：
--
作者：
Ouyang Lingxi;Chong Wang;Mengwei Zhou;Jie Yang;Yu Yang
The photoluminescence (PL) properties corresponding to different types of the interstitial clusters (or defects) in the silicon ion (Si+) self-implanted Si have been well reviewed. Given a brief of the conjectural origin, defect type, annealing temperature of the W (1218 nm), X (1193 nm) peak, R (1376 nm), and D bands concluded the present application of Si+ self-ion-implantation. The challenges for application of light-emitting Si and application prospects are also discussed.
