X-ray photoelectron spectroscopy study of dielectric constant for Si compounds
X-ray photoelectron spectroscopy study of dielectric constant for Si compounds
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DOI：
10.1063/1.2361177
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发表时间：
2006-10-09
影响因子：
4
通讯作者：
Hattori, T.
中科院分区：
文献类型：
--
作者：
Hirose, K.;Kihara, M.;Hattori, T.
作者利用高分辨率高能同步辐射测量了不同Si化合物的Si 1 s和Si 2 p的芯能级结合能位移之差Δ E-1 s-Δ E-2 p。他们发现Δ E-1 s-Δ E-2 p值与Si化合物的介电常数值具有非常好的相关性。使用这个关系，他们推导出的局部介电常数为每个Si中间氧化态形成的SiO2/Si界面。结果与第一性原理计算预测值吻合较好。(c)2006年，美国物理学会。
The authors measure the difference of core-level binding energy shifts for Si 1s and Si 2p, Delta E-1s-Delta E-2p, for various Si compounds using high-resolution high-energy synchrotron radiation. They find that the Delta E-1s-Delta E-2p values are in very good correlation with the dielectric constant values of the Si compounds. Using this relation, they deduce the local dielectric constant for each of the Si intermediate oxidation states formed at the SiO2/Si interface. The results are in good agreement with values predicted by a first-principles calculation. (c) 2006 American Institute of Physics.