InAs/GaInP self-assembled quantum dots: molecular beam epitaxial growth and optical properties
InAs/GaInP self-assembled quantum dots: molecular beam epitaxial growth and optical properties
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DOI：
10.1016/s0022-0248(01)00994-0
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发表时间：
2001-07-01
影响因子：
1.8
通讯作者：
Sakaki, H
中科院分区：
文献类型：
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作者：
Amanai, H;Nagao, S;Sakaki, H
我们利用固体源分子束外延技术(MBE)在GaInP上生长了自组装的InAs量子点，目的是通过将量子点埋入GaInP等大禁带材料中来减少束缚载流子的热离子逸出。用原子力显微镜(AFM)测量了量子点的密度和尺寸。这表明当InAs单层(ML)小于0.15时，在GaInP上形成了InAs量子点。与在GaAs上形成InAs量子点不同。在InAs量子点形成之前，在InGaP表面沉积了一层非常薄的GaAs层，InAs量子点形成的临界厚度系统地增加。当在量子层顶部引入10ML的GaAs层时，在室温下从GaInP基质中的这些量子点中观察到了清晰的光致发光信号。AFM图像和光致发光光谱的良好一致性表明，量子点形状保持在GaInP基质中，没有明显的混合。(C)2001 Elsevier Science B.V.保留所有权利。
We studied the growth of self-assembled InAs quantum dots (QDs) on GaInP using solid source molecular beam epitaxy (MBE) with the aim of reducing the thermionic escape of bound carriers by burying the QDs in large bandgap materials such as GaInP. The density and size of QDs were measured by atomic force microscopy (AFM). This showed that InAs QDs were formed on GaInP when less than 0.15 monolayers (ML) of InAs was deposited. unlike the formation of InAs QDs on GaAs. The critical thickness of InAs layers for the onset of QD formation increased systematically when a very thin GaAs interlayer was deposited onto the InGaP surface before the formation of the InAs QD layer. When a 10 ML GaAs overlayer was introduced on top of the QD layer, clear photoluminescence IPL) signals were observed From these QDs in the GaInP matrix at room temperature. The good correspondence between the AFM image and the PL spectra indicates that the QD shape is kept in the GaInP matrix without appreciable intermixing. (C) 2001 Elsevier Science B.V. All rights reserved.