High current densities in a highly photoluminescent organic single-crystal light-emitting transistor
High current densities in a highly photoluminescent organic single-crystal light-emitting transistor
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DOI：
10.1063/1.3466915
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发表时间：
2010-07
影响因子：
4
通讯作者：
Kosuke Sawabe;T. Takenobu;S. Z. Bisri;T. Yamao;S. Hotta;Y. Iwasa
中科院分区：
文献类型：
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作者：
Kosuke Sawabe;T. Takenobu;S. Z. Bisri;T. Yamao;S. Hotta;Y. Iwasa
通过系统研究纯氮环境下器件老化对器件性能的影响，并优化有机电介质层的制备工艺，研究了5，5 ″-联苯基-2，2 ′：5′，2 ″-三噻吩（BP 3 T）单晶场效应晶体管结构的电子输运特性。我们降低了电子陷阱的影响，并实现了高达10 kA/cm 2的极高电流密度，这比以前的器件中实现的电流密度高出一个或两个数量级。
We report the improvement of electron transport in 5,5″-bis(biphenylyl)-2,2′:5′,2″-terthiophene (BP3T) single crystals on a field-effect transistor configuration by systematically investigating the effects of device aging under pure nitrogen and optimizing the organic dielectric layer-fabrication process. We reduced the effect of electron traps and achieved extremely high current densities up to 10 kA/cm2, which is one or two orders of magnitude greater than the current densities achieved in previous devices.